Read more: [1] Jiahao Han, Yuyan Wang, Feng Pan, Cheng Song “Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 10⁵ A/cm² dc Current” Scientific Reports volume 6, Article number: 31966 (2016)

Spin Hall Electroresistance in Antiferromagnets :

Antiferromagnets (AFM) are very interesting and stable structures, making their study very exciting and promising. In this project, we try to investigate and utilize the properties of antiferromagnets and their interaction with other materials. Antiferromagnets have spontaneous magnetization by two sublattices with opposite directions below Néel temperature, T_N. As a result, they have no net magnetization and act like paramagnets in the sense that their susceptibility is positive and it increases with temperature below Néel temperature and above Néel temperature they have phase change like ferromagnets and they become paramagnets with susceptibility χ = C/T+θ. In our investigation we aim to utilize the spin Hall effect (SHE) and the resultant spin-orbit torque (SOT) and we try to observe a resistance drop with increasing current, electroresistance, based on the work of Han et al.